GANSUP – Development of linear power supplies in GaN technology based on commercial solutions and those developed in the Łukasiewicz Research Network for lighting and smart grid applications

Consortium members:

• Łukasiewicz – Institute of Electrical Engineering
• Łukasiewicz – Poznań Institute of Technology
• Łukasiewicz – Tele and Radio Research Institute
•  Łukasiewicz – Institute of Microelectronics and Photonics

Results:

Development of GaN transistor application technology, development of control and transistor assembly techniques, two 50 W linear power supply prototypes for LED lighting, device optimisation experience with GaN technology for implementation. The customer provided the following power supply requirements: Power supply: 220-240Vac, 50/60Hz, Protection class: II; Stand-by power consumption: ≤0,5W. Operating output voltage over the entire output current control range: 30Vdc-50Vdc; Rated output current adjustable via DIP SWITCH: 600mA, 650mA, 700mA, 750mA, 800mA, 850mA. 900mA, 950mA, 1000mA, 1050mA.

Benefits:

The outcome of the project is to master the application technology of gallium nitride transistors in the construction of electronic/energy-electronic systems, in this case using the example of a linear power supply. The realisation of the project will enable experience to be gained in the design, development of control techniques and assembly of devices using GaN transistors. This will allow the wider introduction of GaN transistors in further projects, together with all their benefits.