GaNISM – GaN HEMT transistors for the ISM band intended for applications in microwave radiation sources
Project co-financed by the state budget. Project co-financed by a specific grant from the President of the Łukasiewicz Centre
Acronym: GaNISM
Type: R&D
Grant: PLN 1,039,500
Total value: PLN 1,155,000
The aim of the project is to develop domestic gallium nitride based transistors for microwave power electronics intended for high power amplifiers used in intelligent and high efficiency microwave radiation sources.
The project involves the design and development of the manufacturing technology for multi-gate AlGaN/GaN HEMT power transistors (high electron mobility transistors) on silicon carbide substrates.
GaN HEMT transistors for the ISM band intended for applications in microwave radiation sources – GaNISM
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